ME2323D-G
Matsuki
1.01MB
P-channel 20v (d-s) mosfet.
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ME2323D - P-Channel 20V (D-S) MOSFET
(Matsuki)
.
ME2323D - P-Channel MOSFET
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ME2323D-VB Datasheet
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P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.060 at VGS = -.
ME2320D - N-Channel 20V (D-S) MOSFET
(Matsuki)
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The ME2320D is the N-Channel logic enhancement mode power field eff.
ME2320D-G - N-Channel 20V (D-S) MOSFET
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N-Channel 20V (D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME2320D is the N-Channel logic enhancement mode power field eff.
ME2320DS - N-Channel 20V (D-S) MOSFET
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N-Channel 20V (D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME2320DS is the N-Channel logic enhancement mode .
ME2320DS-G - N-Channel 20V (D-S) MOSFET
(Matsuki)
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N-Channel 20V (D-S) MOSFET , ESD Protection
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The ME2320DS is the N-Channel logic enhancement mode .
ME2322 - N-Channel 55V (D-S) MOSFET
(Matsuki)
N-Channel 55-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2322 is the N-Channel logic enhancement mode power field effect transistors are produced using h.
ME2322-G - N-Channel 55V (D-S) MOSFET
(Matsuki)
N-Channel 55-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2322 is the N-Channel logic enhancement mode power field effect transistors are produced using h.
ME2324D - N-Channel MOSFET
(VBsemi)
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ME2324D-VB Datasheet
N-Channel 20 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 a.
ME2325 - P-Channel 30V (D-S) MOSFET
(Matsuki)
P-Channel 30V (D-S) MOSFET MOSFET
GENERAL DESCRIPTION
The ME2325 is the P-Channel logic enhancement mode power field effect transistors are produced u.