ME3500 Datasheet (Matsuki) - N- & P-Channel 30V (D-S) MOSFET

ME3500, N- & P-Channel 30V (D-S) MOSFET

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application

ME3500 Features

* RDS(ON) ≦35mΩ@VGS=10V (N-Ch)

* RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦70mΩ@VGS=-10V (P-Ch)

* RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma