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ME3587 N- & P-Channel 20V (D-S) MOSFET

ME3587 Description

N- and P-Channel 20V (D-S) MOSFET GENERAL .
The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME3587 Features

* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
* RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)
* RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)
* Super high density cell design for extremely low RDS(ON)
* Exception

ME3587 Applications

* Power Management in Note

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Datasheet Details

Part number
ME3587
Manufacturer
Matsuki
File Size
1.21 MB
Datasheet
ME3587-Matsuki.pdf
Description
N- & P-Channel 20V (D-S) MOSFET

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P-Channel 20V D-S MOSFET Matsuki
Matsuki ME3587-like datasheet