Datasheet4U Logo Datasheet4U.com

ME3587 Datasheet - Matsuki

N- & P-Channel 20V (D-S) MOSFET

ME3587 Features

* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)

* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)

* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)

* RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)

* RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exception

ME3587 General Description

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME3587 Datasheet (1.21 MB)

Preview of ME3587 PDF

Datasheet Details

Part number:

ME3587

Manufacturer:

Matsuki

File Size:

1.21 MB

Description:

N- & p-channel 20v (d-s) mosfet.

📁 Related Datasheet

ME3587-G N- & P-Channel 20V (D-S) MOSFET (Matsuki)

ME3500 N- & P-Channel 30V (D-S) MOSFET (Matsuki)

ME3500-G N- & P-Channel 30V (D-S) MOSFET (Matsuki)

ME35N06 N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06-G N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06F N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06F-G N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06G N-Channel MOSFET (VBsemi)

ME35N06P N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06P-G N-Channel 60V (D-S) MOSFET (Matsuki)

TAGS

ME3587 P-Channel 20V D-S MOSFET Matsuki

Image Gallery

ME3587 Datasheet Preview Page 2 ME3587 Datasheet Preview Page 3

ME3587 Distributor