ME3587 Datasheet (Matsuki) - N- & P-Channel 20V (D-S) MOSFET

ME3587, N- & P-Channel 20V (D-S) MOSFET

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application

ME3587 Features

* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)

* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)

* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)

* RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)

* RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exception