Datasheet Details
Part number:
ME3587-G, ME3587
Manufacturer:
Matsuki
File Size:
1.21 MB
Description:
N- & p-channel 20v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME3587-G, ME3587.
Please refer to the document for exact specifications by model.
ME3587-G, ME3587, N- & P-Channel 20V (D-S) MOSFET
The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application
ME3587-G Features
* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
* RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)
* RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)
* Super high density cell design for extremely low RDS(ON)
* Exception
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