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ME3500-G, ME3500 N- & P-Channel 30V (D-S) MOSFET

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Description

N- and P-Channel 30V (D-S) MOSFET GENERAL .
The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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This datasheet PDF includes multiple part numbers: ME3500-G, ME3500. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
ME3500-G, ME3500
Manufacturer
Matsuki
File Size
0.96 MB
Datasheet
ME3500-Matsuki.pdf
Description
N- & P-Channel 30V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME3500-G, ME3500.
Please refer to the document for exact specifications by model.

Features

* RDS(ON) ≦35mΩ@VGS=10V (N-Ch)
* RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦70mΩ@VGS=-10V (P-Ch)
* RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch)
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* DC/DC Converter
* Loa

ME3500-G Distributors

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