ME7908ED-G Datasheet (Matsuki)

ME7908ED-G, N-Channel MOSFET

The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application su

ME7908ED-G Features

* RDS(ON)≦16mΩ@VGS=4.5V

* RDS(ON)≦24mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter low side switch