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ME7910D Dual N-Channel MOSFET

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Description

ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL .
The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME7910D
Manufacturer
Matsuki
File Size
859.41 KB
Datasheet
ME7910D-Matsuki.pdf
Description
Dual N-Channel MOSFET

Features

* RDS(ON)≦14mΩ@VGS=4.5V
* RDS(ON)≦15mΩ@VGS=4V
* RDS(ON)≦17.5mΩ@VGS=3.1V
* RDS(ON)≦21mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching

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