ME7910D-G, ME7910D Datasheet - Matsuki

ME7910D-G Dual N-Channel MOSFET

The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

ME7910D-G Features

* RDS(ON)≦14mΩ@VGS=4.5V

* RDS(ON)≦15mΩ@VGS=4V

* RDS(ON)≦17.5mΩ@VGS=3.1V

* RDS(ON)≦21mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Batt

ME7910D-Matsuki.pdf

ME7910D-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME7910D-G, ME7910D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME7910D-G, ME7910D

Manufacturer:

Matsuki

File Size:

859.41 KB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME7910D-G, ME7910D.
Please refer to the document for exact specifications by model.

ME7910D-G Distributor

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ME7910D-G ME7910D Dual N-Channel MOSFET Matsuki