Datasheet Details
Part number:
ME7910D-G, ME7910D
Manufacturer:
Matsuki
File Size:
859.41 KB
Description:
Dual n-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME7910D-G, ME7910D.
Please refer to the document for exact specifications by model.
ME7910D-G, ME7910D, Dual N-Channel MOSFET
The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application su
ME7910D-G Features
* RDS(ON)≦14mΩ@VGS=4.5V
* RDS(ON)≦15mΩ@VGS=4V
* RDS(ON)≦17.5mΩ@VGS=3.1V
* RDS(ON)≦21mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Batt
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