ME7906ED Datasheet (Matsuki) - N-Channel MOSFET

ME7906ED, N-Channel MOSFET

The ME7906ED is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME7906ED Features

* RDS(ON)≦22mΩ@VGS=4.5V

* RDS(ON)≦23mΩ@VGS=4V

* RDS(ON)≦30mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Green product-Halogen free APPLICATIONS

* Power Management in Note book

* B