ME8205E-G, ME8205E Datasheet - Matsuki

ME8205E-G Dual N-Channel MOSFET

The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

ME8205E-G Features

* RDS(ON)≦22mΩ@VGS=4.5V

* RDS(ON)≦23mΩ@VGS=4.0V

* RDS(ON)≦26mΩ@VGS=3.0V

* RDS(ON)≦29mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Port

ME8205E-Matsuki.pdf

ME8205E-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME8205E-G, ME8205E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME8205E-G, ME8205E

Manufacturer:

Matsuki

File Size:

585.95 KB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME8205E-G, ME8205E.
Please refer to the document for exact specifications by model.

ME8205E-G Distributor

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ME8205E-G ME8205E Dual N-Channel MOSFET Matsuki