ME8205E-G - Dual N-Channel MOSFET
The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application su
ME8205E-G Features
* RDS(ON)≦22mΩ@VGS=4.5V
* RDS(ON)≦23mΩ@VGS=4.0V
* RDS(ON)≦26mΩ@VGS=3.0V
* RDS(ON)≦29mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Port
