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ME8205E-G, ME8205E - Dual N-Channel MOSFET

ME8205E-G Description

Dual N-Channel 20V (D-S) MOSFET GENERAL .
The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME8205E-G Features

* RDS(ON)≦22mΩ@VGS=4.5V
* RDS(ON)≦23mΩ@VGS=4.0V
* RDS(ON)≦26mΩ@VGS=3.0V
* RDS(ON)≦29mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

ME8205E-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME8205E-G, ME8205E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME8205E-G, ME8205E
Manufacturer
Matsuki
File Size
585.95 KB
Datasheet
ME8205E-Matsuki.pdf
Description
Dual N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME8205E-G, ME8205E.
Please refer to the document for exact specifications by model.

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Dual N-Channel MOSFET Matsuki
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