Datasheet4U Logo Datasheet4U.com

MSAFA1N100D Datasheet - Microsemi Corporation

MSAFA1N100D Fast MOSFET Die

* * * N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti * Ni (1 um) * Ag (0.2 um) for soft solder attach Low On-state resi.

MSAFA1N100D Features

* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @

MSAFA1N100D Datasheet (78.60 KB)

Preview of MSAFA1N100D PDF
MSAFA1N100D Datasheet Preview Page 2 MSAFA1N100D Datasheet Preview Page 3

Datasheet Details

Part number:

MSAFA1N100D

Manufacturer:

Microsemi ↗ Corporation

File Size:

78.60 KB

Description:

Fast mosfet die.

📁 Related Datasheet

MSAFA1N100P3 MOSFET Device (Microsemi Corporation)

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFR12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFR30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX24N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

TAGS

MSAFA1N100D Fast MOSFET Die Microsemi Corporation

MSAFA1N100D Distributor