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MSAFA1N100D

Fast MOSFET Die

MSAFA1N100D Features

* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @

MSAFA1N100D General Description



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* N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti

* Ni (1 um)

* Ag (0.2 um) for soft solder attach Low On-state resi.

MSAFA1N100D Datasheet (78.60 KB)

Preview of MSAFA1N100D PDF

Datasheet Details

Part number:

MSAFA1N100D

Manufacturer:

Microsemi ↗ Corporation

File Size:

78.60 KB

Description:

Fast mosfet die.
2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable.

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MSAFA1N100D Fast MOSFET Die Microsemi Corporation

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