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MSAFA1N100D Fast MOSFET Die

MSAFA1N100D Description

2830 S.Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable.
N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu.

MSAFA1N100D Features

* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @

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Fast MOSFET Die Microsemi Corporation
Microsemi Corporation MSAFA1N100D-like datasheet