MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi Corporation

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX11P50A 500 Volts 11 Amps 750 mΩ P-CHANNEL ENHANCEMENT MODE POWER.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

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Datasheet Specifications

Part number: MSAFX11P50A
Manufacturer: Microsemi ↗ Corporation
File Size: 68.56 KB
Datasheet: MSAFX11P50A_MicrosemiCorporation.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power

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📁 Related Datasheet

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MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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