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MSAFX75N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFX75N10A Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 www.DataSheet4U.com MSAFX75N10A 100 Volts 75 Amps 20 mΩ N-CHANNEL EN.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

MSAFX75N10A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation
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