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MSAFX24N50A Datasheet - Microsemi Corporation

MSAFX24N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 500 500 +/-20 +/-30 24 20 96 24 30 tbd 5.0 300 -55 to +150 -55 to +150 24 96 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ .

MSAFX24N50A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

MSAFX24N50A Datasheet (68.20 KB)

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Datasheet Details

Part number:

MSAFX24N50A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.20 KB

Description:

N-channel enhancement mode power mosfet.

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MSAFX24N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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