Datasheet4U Logo Datasheet4U.com

MSAFX20N60A Datasheet - Microsemi Corporation

MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd 5.0 300 -55 to +150 -55 to +150 20 80 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns W.

MSAFX20N60A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

MSAFX20N60A_MicrosemiCorporation.pdf

Preview of MSAFX20N60A PDF
MSAFX20N60A Datasheet Preview Page 2

Datasheet Details

Part number:

MSAFX20N60A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.18 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

MSAFX24N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX40N30A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX50N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX75N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX76N07A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFA1N100D Fast MOSFET Die (Microsemi Corporation)

TAGS

MSAFX20N60A MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

MSAFX20N60A Distributor