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MSAFX20N60A Datasheet - Microsemi Corporation

MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 600 600 +/-20 +/-30 20 15 80 20 30 tbd 5.0 300 -55 to +150 -55 to +150 20 80 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns W.

MSAFX20N60A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

MSAFX20N60A Datasheet (68.18 KB)

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Datasheet Details

Part number:

MSAFX20N60A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.18 KB

Description:

N-channel enhancement mode power mosfet.

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MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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