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MSAFX50N20A Datasheet - Microsemi Corporation

MSAFX50N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 50 40 200 50 30 tbd 5.0 300 -55 to +150 -55 to +150 50 200 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns.

MSAFX50N20A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

MSAFX50N20A Datasheet (68.21 KB)

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Datasheet Details

Part number:

MSAFX50N20A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.21 KB

Description:

N-channel enhancement mode power mosfet.

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MSAFX50N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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