MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi Corporation

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A 900 Volts 10 Amps 1.1 Ω N-CHANNEL ENHANCEMENT MODE POWER .
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS IS.

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Datasheet Specifications

Part number: MSAFX10N90A
Manufacturer: Microsemi ↗ Corporation
File Size: 71.37 KB
Datasheet: MSAFX10N90A_MicrosemiCorporation.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance
* Very low thermal resistance
* Reverse polar

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MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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