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MSAFX10N90A Datasheet - Microsemi Corporation

MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ .

MSAFX10N90A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance

* Very low thermal resistance

* Reverse polar

MSAFX10N90A Datasheet (71.37 KB)

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Datasheet Details

Part number:

MSAFX10N90A

Manufacturer:

Microsemi ↗ Corporation

File Size:

71.37 KB

Description:

N-channel enhancement mode power mosfet.

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MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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