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MSAFX76N07A Datasheet - Microsemi Corporation

MSAFX76N07A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 70 70 +/-20 +/-30 76 60 300 100 30 2000 5.0 300 -55 to +150 -55 to +150 76 300 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns.

MSAFX76N07A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola

MSAFX76N07A Datasheet (68.06 KB)

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Datasheet Details

Part number:

MSAFX76N07A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.06 KB

Description:

N-channel enhancement mode power mosfet.

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MSAFX76N07A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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