MSAFR12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi Corporation

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A 500 Volts 12 Amps 400 mΩ N-CHANNEL ENHANCEMEN.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

📥 Download Datasheet

MSAFR12N50A Datasheet Preview — Preview of MSAFR12N50A PDF

Datasheet Specifications

Part number: MSAFR12N50A
Manufacturer: Microsemi ↗ Corporation
File Size: 68.30 KB
Datasheet: MSAFR12N50A_MicrosemiCorporation.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAFR12N50A Distributors

📁 Related Datasheet

MSA-0100 MSA-0104 MSA-0135 MSA-0136 MSA-0170 MSA-0185

📌 All Tags

MSAFR12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

Microsemi Corporation MSAFR12N50A-like datasheet