MSAFR12N50A Datasheet (Microsemi Corporation) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFR12N50A, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX.

500 500 +/-20 +/-30 12 8 48 12 tbd 8 3.5 300 -55 to +150 -55 to +150 12 48 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watt

MSAFR12N50A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind