MSAFZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi Corporation

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A 200 Volts 33 Amps 70 mΩ N-CHANNEL ENHANCEMENT.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

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Datasheet Specifications

Part number: MSAFZ33N20A
Manufacturer: Microsemi ↗ Corporation
File Size: 68.43 KB
Datasheet: MSAFZ33N20A_MicrosemiCorporation.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

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MSAFZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

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