Datasheet4U Logo Datasheet4U.com

MSAFZ50N10A Datasheet - Microsemi Corporation

MSAFZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/n.

MSAFZ50N10A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

MSAFZ50N10A Datasheet (68.31 KB)

Preview of MSAFZ50N10A PDF
MSAFZ50N10A Datasheet Preview Page 2

Datasheet Details

Part number:

MSAFZ50N10A

Manufacturer:

Microsemi ↗ Corporation

File Size:

68.31 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

MSAFZ33N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFA1N100D Fast MOSFET Die (Microsemi Corporation)

MSAFA1N100P3 MOSFET Device (Microsemi Corporation)

MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFR12N50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFR30N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Microsemi Corporation)

TAGS

MSAFZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation

MSAFZ50N10A Distributor