Datasheet4U Logo Datasheet4U.com

MSAFZ50N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFZ50N10A Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A 100 Volts 50 Amps 35 mΩ N-CHANNEL ENHANCEMENT.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM.

MSAFZ50N10A Features

* Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package ind

📥 Download Datasheet

Preview of MSAFZ50N10A PDF
datasheet Preview Page 2

📁 Related Datasheet

  • MSA-0100 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0104 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0135 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0136 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0170 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0185 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0186 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0200 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi Corporation
Microsemi Corporation MSAFZ50N10A-like datasheet