The MSAFZ50N10A by Microsemi Corporation is a N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Below is the official datasheet preview.
| Part number | MSAFZ50N10A |
|---|---|
| Manufacturer | Microsemi Corporation |
| File Size | 68.31 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 MSAFZ50N10A_MicrosemiCorporation.pdf
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Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX.100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Tj= 25°C Tj= Pe
📁 MSAFZ50N10A Similar Datasheet
