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CM150E3U-12H Datasheet - Mitsubishi Electric Semiconductor

IGBT Module

CM150E3U-12H Features

* ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Application: ٗ Brake Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150E3U-12H is a 600V (VCES)

CM150E3U-12H General Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat .

CM150E3U-12H Datasheet (50.80 KB)

Preview of CM150E3U-12H PDF

Datasheet Details

Part number:

CM150E3U-12H

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

50.80 KB

Description:

Igbt module.
MITSUBISHI IGBT MODULES CM150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G2 G2 U C1 3-M5 Nuts O P O Q .

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CM150E3U-12H IGBT Module Mitsubishi Electric Semiconductor

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