Datasheet Specifications
- Part number
- CM150E3U-24H
- Manufacturer
- Mitsubishi Electric Semiconductor
- File Size
- 43.18 KB
- Datasheet
- CM150E3U-24H_MitsubishiElectricSemiconductor.pdf
- Description
- IGBT Module
Description
MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A D F S(4 - Mounting Holes) H B E T CM 3 - M6 Nuts .
Features
* ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking E2 G2 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H K Inches 4.25 2.44 3.66±0.01 1.88±0.01 0.87 0.16 0.24 0.71 MillApplications
* Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal managCM150E3U-24H Distributors
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