CM800E2Z-66H Datasheet - Mitsubishi Electric Semiconductor

CM800E2Z-66H IGBT Module

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H q IC 800A q VCES 3300V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 NUTS C C C K (C) G E 124 ±0.25 140 C C C 40 20 E E A (E) CM E E E .

CM800E2Z-66H_Mitsubishi ElectricSemiconductor.pdf

CM800E2Z-66H Datasheet Preview — Preview of CM800E2Z-66H PDF

Datasheet Details

Part number:

CM800E2Z-66H

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

82.81 KB

Description:

Igbt module.

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