CM800E6C-66H - IGBT Module
www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC 800A q VCES 3300V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS C 20 0.2 +0.1 C C K (C)
