RA08H1317M Silicon RF Power Modules

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO BLOCK DI.
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA08H1317M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 1.27 MB
Datasheet: RA08H1317M_MitsubishiElectricSemiconductor.pdf
Description: Silicon RF Power Modules

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
* ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW
* Broadband Frequency Range: 135-175MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA08H1317M Distributors

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RA08H1317M Silicon Power Modules Mitsubishi Electric Semiconductor

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