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RA08H1317M

Silicon RF Power Modules

RA08H1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)

* Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW

* ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW

* Broadband Frequency Range: 135-175MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA08H1317M General Description

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows.

RA08H1317M Datasheet (1.27 MB)

Preview of RA08H1317M PDF

Datasheet Details

Part number:

RA08H1317M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

1.27 MB

Description:

Silicon rf power modules.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO BLOCK DI.

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TAGS

RA08H1317M Silicon Power Modules Mitsubishi Electric Semiconductor

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