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RA08N1317M RoHS Compliance

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Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W.
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.

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Datasheet Specifications

Part number
RA08N1317M
Manufacturer
Mitsubishi Electric
File Size
152.13 KB
Datasheet
RA08N1317M_MitsubishiElectric.pdf
Description
RoHS Compliance

Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V)
* Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW
* Broadband Frequency Range: 135-175MHz www. DataSheet4U. com
* Low-Power Control Current IGG=1mA (typ)

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