RA08N1317M Datasheet - Mitsubishi Electric

RoHS Compliance

RA08N1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V)

* Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW

* ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW

* Broadband Frequency Range: 135-175MHz www.DataSheet4U.com

* Low-Power Control Current IGG=1mA (typ)

RA08N1317M General Description

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA08N1317M Datasheet (152.13 KB)

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Datasheet Details

Part number:

RA08N1317M

Manufacturer:

Mitsubishi Electric

File Size:

152.13 KB

Description:

Rohs compliance.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W.

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RA08N1317M RoHS Compliance Mitsubishi Electric

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RA08N1317M Features

RA08N1317M General Description

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RA08N1317M Distributor