MGFC5107 - Ka-Band 3-Stage Self Bias Low Noise Amplifier

Mitsubishi

Datasheet Details

Part number	MGFC5107
Manufacturer	Mitsubishi
File Size	43.37 KB
Description	Ka-Band 3-Stage Self Bias Low Noise Amplifier
Datasheet	MGFC5107_MitsubishiElectricSemiconductor.pdf

The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band Low Noise Amplifier.(LNA) .

RF frequency : 21.0 to 24.0 GHz Super Low Noise NF=2.5dB (TYP. ) Single voltage operation In Vg1 Vg2 Vg3 Out.

📁 MGFC5107 Similar Datasheet

MGFC39V5867 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V3742 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V4450 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V5964 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V6472 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V7177 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

Published: Apr 29, 2005 |