Datasheet4U Logo Datasheet4U.com

2N1120 Datasheet - Motorola

2N1120 PNP germanium power transistor

1120 2N (GERMANIUM) PNP germanium power transistor for military and industrial power applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter Current Total Device Dissipation @ TC = 250 C Derate above 250 C Operating Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCES VCB VEB IE PD TJ 2N1120 40 70 80 40 15 90 1.2 -65 to +100 Unit Vdc Vdc Vd.

2N1120 Datasheet (91.55 KB)

Preview of 2N1120 PDF
2N1120 Datasheet Preview Page 2

Datasheet Details

Part number:

2N1120

Manufacturer:

Motorola

File Size:

91.55 KB

Description:

Pnp germanium power transistor.

📁 Related Datasheet

2N1100 PNP germanium power transistors (Motorola)

2N1131 PNP SILICON ANNULAR TRANSISTORS (Motorola)

2N1131 LOW POWER PNP SILICON TRANSISTOR (Microsemi)

2N1131 SILICON PNP TRANSISTOR (Central Semiconductor)

2N1131A PNP SILICON ANNULAR TRANSISTORS (Motorola)

2N1131L LOW POWER PNP SILICON TRANSISTOR (Microsemi)

2N1132 LOW POWER PNP SILICON TRANSISTOR (Microsemi)

2N1132 SILICON PLANAR PNP TRANSISTOR (TT)

TAGS

2N1120 PNP germanium power transistor Motorola

2N1120 Distributor