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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(RBE * 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol V CER
Value 50
Unit Vdc
VCBO VEBO
'C
PD
pd
TJ' Tst g
75 7.0 500
0.8 4.57
3.0 17.15
- 65 to + 200
Vdc Vdc mAdc Watt mW/°C Watts ,mW/°C
°C
Symbol R&jc
Max
58.3
Unit °C/W
2N1613
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.