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MRF157 MOS LINEAR RF POWER FET

MRF157 Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effec.

MRF157 Features

* contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the TMOS FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high
* on the order of 109 ohms
* resulting in a leakage cur

MRF157 Applications

* LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equiv

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Datasheet Details

Part number
MRF157
Manufacturer
Motorola
File Size
203.36 KB
Datasheet
MRF157_Motorola.pdf
Description
MOS LINEAR RF POWER FET

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MOS LINEAR POWER FET Motorola
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