MRF157 MOS LINEAR RF POWER FET

Motorola

Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effec.

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Datasheet Specifications

Part number: MRF157
Manufacturer: Motorola
File Size: 203.36 KB
Datasheet: MRF157_Motorola.pdf
Description: MOS LINEAR RF POWER FET

Features

* contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the TMOS FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high
* on the order of 109 ohms
* resulting in a leakage cur

Applications

* LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equiv

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MRF157 MOS LINEAR POWER FET Motorola

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