MRF157 Datasheet (Motorola) - MOS LINEAR RF POWER FET

MRF157, MOS LINEAR RF POWER FET

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transistor N Channel Enhancement Mode Designed primarily for linear large signal output stages to 80 MHz.

Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POWER FET D G S CASE 368 03, STYLE 2 MAXIMUM RATINGS Rat

MRF157 Features

* contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the TMOS FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high

* on the order of 109 ohms

* resulting in a leakage cur