* contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the TMOS FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high
* on the order of 109 ohms
* resulting in a leakage cur
MRF157
Motorola
203.36 KB
Mos linear rf power fet.
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Power MOS Line
Power Field Effec.
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