Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enha.
Features
* NSION: INCH. Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435
* 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14
Applications
* up to 200 MHz frequency range. The high
* power, high
* gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands.
* Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) E
