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MRF175GU N-CHANNEL MOS BROADBAND RF POWER FET

MRF175GU Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU/D The RF MOSFET Line RF Power Field-Effect Transistors N *Channel Enh.

MRF175GU Features

* s are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter
* terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive

MRF175GU Applications

* using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
* Guaranteed Performance MRF175GV @ 28 V, 225 MHz (“V” Suffix) Output Power

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Datasheet Details

Part number
MRF175GU
Manufacturer
Motorola
File Size
183.21 KB
Datasheet
MRF175GU_Motorola.pdf
Description
N-CHANNEL MOS BROADBAND RF POWER FET

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N-CHANNEL MOS BROADBAND POWER FET Motorola
Motorola MRF175GU-like datasheet