MRF19085LR3 RF Power Field Effect Transistors

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF19085/D The RF MOSFET Line RF Power Field Effect Tr.
Short Ferrite Bead 51 pF Chip Capacitor 5.

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Datasheet Specifications

Part number: MRF19085LR3
Manufacturer: Motorola
File Size: 622.91 KB
Datasheet: MRF19085LR3_Motorola.pdf
Description: RF Power Field Effect Transistors

Features

* gure 5. Intermodulation Distortion Products versus Output Power IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 24 η 22 20 18 16 14 12 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA IM3 2
* Carrier N
* CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Chan

Applications

* with frequencies from www. datasheet4u. com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg. , f1 = 1960 MHz, f2 = 19

MRF19085LR3 Distributors

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MRF19085LR3 Power Field Effect Transistors Motorola

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