MRF19125R3 Datasheet - Freescale Semiconductor

MRF19125R3 RF Power Field Effect Transistors

Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #10.

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Tra.

MRF19125R3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa

MRF19125R3_FreescaleSemiconductor.pdf