MRF19125R3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev.6, 4/2006 RF Power Field Effect Transistors N - Channel E.
Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.

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Datasheet Specifications

Part number: MRF19125R3
Manufacturer: Freescale Semiconductor
File Size: 454.81 KB
Datasheet: MRF19125R3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

Applications

* with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz

MRF19125R3 Distributors

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MRF19125R3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF19125R3-like datasheet