MRF19125R3 - RF Power Field Effect Transistors
Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #10
Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF19125 Rev.
6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Tra
MRF19125R3 Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
