* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
MRF19125R3 Datasheet (454.81 KB)
MRF19125R3
Freescale Semiconductor
454.81 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
www.DataSheet4U.com
Document Number: MRF19125 Rev. 6, 4/2006
RF Power Field Effect Transistors
N - Channel E.
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