MRF19085LR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF19085LR3 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Late.
Part Number Manufacturer B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Short Ferrite Bead.

MRF19085LR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign

MRF19085LR3 Applications

* with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT. ,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 MHz Ch

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Datasheet Details

Part number: MRF19085LR3
Manufacturer: Freescale Semiconductor
File Size: 397.59 KB
Datasheet: MRF19085LR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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Power Field Effect Transistors Freescale Semiconductor

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