MRF19085LR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Late.
Part Number Manufacturer B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Short Ferrite Bead.

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Datasheet Specifications

Part number: MRF19085LR3
Manufacturer: Freescale Semiconductor
File Size: 397.59 KB
Datasheet: MRF19085LR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign

Applications

* with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT. ,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 MHz Ch

MRF19085LR3 Distributors

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MRF19085LR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF19085LR3-like datasheet