MRF19090SR3 Datasheet - Freescale Semiconductor

MRF19090SR3 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. www.datasheet4u.com Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 9 Watt.

MRF19090SR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa

MRF19090SR3 Datasheet (382.82 KB)

MRF19090SR3 Datasheet Preview — Preview of MRF19090SR3 PDF

Datasheet Details

Part number:

MRF19090SR3

Manufacturer:

Freescale Semiconductor

File Size:

382.82 KB

Description:

Rf power field effect transistors.

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MRF19090SR3 Power Field Effect Transistors Freescale Semiconductor

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