MRF19060LSR3, MRF19060LR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF19060LSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev.9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode La.

MRF19060LSR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

MRF19060LSR3 Applications

* with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. www. datasheet4u. com
* Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power
* 7.5 Watts Power Gain

📥 Download Datasheet

MRF19060LSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF19060LSR3, MRF19060LR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF19060LSR3, MRF19060LR3
Manufacturer: Freescale Semiconductor
File Size: 447.95 KB
Datasheet: MRF19060LR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF19060LSR3, MRF19060LR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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