* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
MRF19060LSR3 Datasheet (447.95 KB)
MRF19060LSR3
Freescale Semiconductor
447.95 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode La.
📁 Related Datasheet
MRF19060LR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF19060 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19060R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19060SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF19045LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
