MRF19060LR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev.9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode La.

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Datasheet Specifications

Part number: MRF19060LR3
Manufacturer: Freescale Semiconductor
File Size: 447.95 KB
Datasheet: MRF19060LR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

Applications

* with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. www. datasheet4u. com
* Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power
* 7.5 Watts Power Gain

MRF19060LR3 Distributors

📁 Related Datasheet

MRF19060 MRF19060R3 MRF19060SR3 MRF19030LR3 MRF19030LSR3 MRF19030R3

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MRF19060LR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF19060LR3-like datasheet