* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa
MRF19090R3 Datasheet (382.82 KB)
MRF19090R3
Freescale Semiconductor
382.82 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF19090 Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode La.
📁 Related Datasheet
MRF19090 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19090S RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19090SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19090SR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF19045LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
