MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Tr.

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Datasheet Specifications

Part number: MRF19045LR3
Manufacturer: Motorola
File Size: 608.25 KB
Datasheet: MRF19045LR3_Motorola.pdf
Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Features

* FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 0 1 2 3 4 5 6 7 8 9 10 11 12 13.5 Pout, OUTPUT POWER (WATTS) (Avg. 2
* Carrier N
* CDMA) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input P

Applications

* with frequencies from www. datasheet4u. com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications.
* Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 T

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MRF19045LR3 Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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