MRF19030SR3 - RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r e quencies from 1.8 to 2.0 GHz.
Suitable for FM, TDMA, CDMA and www.datasheet4u.com multicarrier amplifier applications.
CDMA Performance @ 1990 MHz, 26 Volts IS 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz
MRF19030SR3 Features
* SULATOR) aaa M H B M T A M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E
* 03 ISSUE D NI
* 400 MRF19030R3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) A
