MRF19045R3 - RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF19045R3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enh.

MRF19045R3 Features

* -45 -50 -55 -60 η 1.0 10 100 -65 IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 1900 G ps IMD IRL η VDD = 26 Vdc IDQ = 450 mA 100 kHz Tone Spacing 0 -5 -10 -15 -20 -25 -30 -35 2020 IMD 1930 1960 f, FREQUENCY (MHz) 1990 Pout, OUTPUT POWER (WATTS PEP) Figure 9. CW Two-Tone Power

MRF19045R3 Applications

* with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications.
* Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi
* carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power
* 9.5 Wat

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Datasheet Details

Part number: MRF19045R3
Manufacturer: Motorola
File Size: 326.59 KB
Datasheet: MRF19045R3_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS

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POWER FIELD EFFECT TRANSISTORS Motorola

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