MRF19045R3 - RF POWER FIELD EFFECT TRANSISTORS
0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, B Case, ATC #100B240JP500X 470 pF Chip Capacitor, B Case, ATC #100B471JP200X
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 .
9 t o 2 .
0 G H z .
S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications.
Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Th
MRF19045R3 Features
* -45 -50 -55 -60 η 1.0 10 100 -65 IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 1900 G ps IMD IRL η VDD = 26 Vdc IDQ = 450 mA 100 kHz Tone Spacing 0 -5 -10 -15 -20 -25 -30 -35 2020 IMD 1930 1960 f, FREQUENCY (MHz) 1990 Pout, OUTPUT POWER (WATTS PEP) Figure 9. CW Two-Tone Power
