Description
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Late.
Part Number
Manufacturer
B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB
Short Ferrite Bead.
Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Sign
Applications
* with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT. ,rfa1ff=ic
1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13)
MHz
1.2288 MHz Ch