MRF19085SR3 - RF Power Field Effect Transistors
Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 0.1 µF Tantalum Surface Mount Capacitor 10 pF Chip Capacitor 10 µF Tantalum Surface Mount Capacitor 22 µF Tantalum Surface Mount Capacitors 1 Turn, 20 AWG, 0.100″ ID Type N Flange Mounts 1.0
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF19085/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from www.datasheet4u.com 1.9 to 2.0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications.
Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 M
MRF19085SR3 Features
* gure 5. Intermodulation Distortion Products versus Output Power IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 24 η 22 20 18 16 14 12 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA IM3 2
* Carrier N
* CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Chan
