MRF19120 - RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN
MRF19120 Features
* 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 η, EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 13 Gps 10 9 8 7 6 5 0.1 1.0 η VDD = 26 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing
