MRF19125S - RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #10
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
Typical 2 Carrier N CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2
MRF19125S Features
* = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 IMD Gps -30 -35 1990 2000 12 1920 1930 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATIO
