* 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 η, EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 13 Gps 10 9 8 7 6 5 0.1 1.0 η VDD = 26 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing
MRF19120S Datasheet (387.66 KB)
MRF19120S
Motorola
387.66 KB
Rf power field effect transistors.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub Micron MOSFET Line www.DataSheet4U.com RF Power Field E.
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