MRF19120S, MRF19120 RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF19120S Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub *Micron MOSFET Line www.DataSheet4U.com RF Power Field E.

MRF19120S Features

* 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 η, EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 13 Gps 10 9 8 7 6 5 0.1 1.0 η VDD = 26 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing

MRF19120S Applications

* with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* CDMA Performance @ 1990 MHz, 26 Volts IS
* 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

📥 Download Datasheet

MRF19120S Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF19120S, MRF19120. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF19120S, MRF19120
Manufacturer: Motorola
File Size: 387.66 KB
Datasheet: MRF19120_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS
Note: This datasheet PDF includes multiple part numbers: MRF19120S, MRF19120.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTORS Motorola

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