MRF20030 - RF POWER TRANSISTOR
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB amplifier applications.
Suitable for frequency modulated, amplitude modulated and multi
MRF20030 Features
* 5 mA 38 Gpe 36 10.5 G pe , GAIN (dB) COLLECTOR EFFICIENCY (%) INPUT VSWR 10 η 9.5 VSWR 34 1.7:1 32 28 9 1800 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 1.1:1 Figure 9. DC Class A Safe Operating Area Figure 10. Performance in Broadband Circuit 60 MTBF FACTOR (HOURS x AMPS 2 ) Pout , O
