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MRF20030 - RF POWER TRANSISTOR

MRF20030 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub *Micron Bipolar Line RF Power Bipol.

MRF20030 Features

* 5 mA 38 Gpe 36 10.5 G pe , GAIN (dB) COLLECTOR EFFICIENCY (%) INPUT VSWR 10 η 9.5 VSWR 34 1.7:1 32 28 9 1800 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 1.1:1 Figure 9. DC Class A Safe Operating Area Figure 10. Performance in Broadband Circuit 60 MTBF FACTOR (HOURS x AMPS 2 ) Pout , O

MRF20030 Applications

* at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common
* emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi
* carrier base station RF po

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Datasheet Details

Part number
MRF20030
Manufacturer
Motorola
File Size
282.60 KB
Datasheet
MRF20030_Motorola.pdf
Description
RF POWER TRANSISTOR

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POWER TRANSISTOR Motorola
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