MRF20060S - RF Power Bipolar Transistors
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices make them ideal for large signal, common emitter class A and class AB amplifier applications.
These devices are suitab
MRF20060S Features
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* j5
* j3
* j0.5
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* j1 ee DataSh DataSheet4U.com VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) Ω 1.0 + j4.8 1.5 + j4.8 2.0 + j4.7 2.5 + j4.7 3.5 + j4.7 ZOL
* Ω 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2
