Part number: MRF20060S
Manufacturer: Motorola
File Size: 278.63KB
Download: 📄 Datasheet
Description: RF Power Bipolar Transistors
m
MRF20060 MRF20060S 6 MOTOROLA RF DEVICE DATA
DataSheet 4 U .com
www.DataSheet4U.com
+ j1
+ j0.5
+ j2
f = 1.8 GHz Zin f = 1.8 GHz
+ j0.2
1.85 GHz 1.9 GHz 1.95 GHz.
at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make.
Image gallery
TAGS
📁 Related Datasheet
MRF20060 - RF Power Bipolar Transistors
(Motorola)
www..com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20060/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Trans.
MRF20060R - RF POWER BIPOLAR TRANSISTOR
(Motorola)
www..com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20060R/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Tran.
MRF20060RS - RF POWER BIPOLAR TRANSISTOR
(Motorola)
www..com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20060R/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Tran.
MRF2001 - Microwave Power Transistors
(Motorola Semiconductor)
www..com
.com
DataShee
.com
DataSheet 4 U .com
www..com
.com
et4U.com
DataShee
DataShe.
MRF2001B - Microwave Power Transistors
(Motorola Semiconductor)
www..com
.com
DataShee
.com
DataSheet 4 U .com
www..com
.com
et4U.com
DataShee
DataShe.
MRF2001M - Microwave Power Transistors
(Motorola Semiconductor)
www..com
.com
ee DataSh
.com
DataSheet 4 U .com
www..com
.com
m et4U.co
ee DataSh
Data.
MRF20030 - RF POWER TRANSISTOR
(Motorola)
www..com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20030/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Trans.
MRF206 - Half-Inch Diameter Process Sealed Rotaries
(NKK)
Half-Inch Diameter Process Sealed Rotaries
Series MR
Distinctive Characteristics
Low profile body of MRF model accommodates space limitations requir.
MRF207 - HIGH FREQUENCY TRANSISTOR
(Motorola)
MRF207
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continu.
MRF21010LR1 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base statio.
